symbol v ds v gs i dm i ar e ar t j , t stg thermal characteristics symbol typ ma x 14.2 20 48 60 r jc 3.5 5 repetitive avalanche energy l=0.3mh c 94 mj w t a =70c 1.3 power dissipation a t a =25c p dsm 2 junction and storage temperature range a p d c 30 15 -55 to 175 t c =100c avalanche current c 25 i d 44 31 100 pulsed drain current c power dissipation b t c =25c continuous drain current maximum units parameter t c =25c t c =100c maximum junction-to-ambient a steady-state c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 gate-source voltage drain-source voltage 25 w maximum junction-to-case b steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w a t a =70c 10 continuous drain current g t a =25c i dsm 12 aol1432 n-channel enhancement mode field effect transistor features v ds (v) =25v i d = 44 a (v gs = 10v) r ds(on) < 8.5 m ? (v gs = 10v) r ds(on) < 14 m ? (v gs = 4.5v) uis tested rg,ciss,coss,crss tested general description the aol1432 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in pwm, load switching and general purpose applications. -rohs compliant -halogen and antimony free green device* a g d s ultra so-8 tm top view bottom tab connected to drain s g d alpha & omega semiconductor, ltd. www.aosmd.com
aol1432 symbol min typ max units bv dss 25 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 100 a 6.5 8.5 t j =125c 9.5 12 11.5 14 m ? ? q g (10v) 26.4 32 nc q g (4.5v) 13.5 nc q gs 3.9 nc q gd 7.75 nc t d(on) 6.5 ns t r 10 ns t d(off) 22.7 ns t f 6.2 ns t rr 23.06 27.5 ns q rr 15.25 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=100a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =12.5v, r l =0.6 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =12.5v, i d =20a gate source charge gate drain charge total gate charge m ? i s =1a, v gs =0v v ds =5v, i d =10a v gs =4.5v, i d =20a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance i dss a gate threshold voltage v ds =v gs , i d =250 a v ds =20v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250ua, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =30a reverse transfer capacitance i f =20a, di/dt=100a/ s v gs =0v, v ds =12.5v, f=1mhz switching parameters a : the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. g. surface mounted on a 1 in 2 fr-4 board with 2oz. copper. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. * this device is guaranteed green after date code 8p11 (june 1 st 2008) rev 3: jul 2008 alpha & omega semiconductor, ltd. www.aosmd.com
aol1432 typical electrical and thermal characteristics 0 10 20 30 40 50 60 012345 v gs (volts) figure 2: transfer characteristics i d (a) 0 2 4 6 8 10 12 14 16 18 0 102030405060 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v, 20a v gs =10v, 20a 0 5 10 15 20 25 30 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =4v 3.5v 6v 7v 10v 4.5v 5v 3v alpha & omega semiconductor, ltd. www.aosmd.com
aol1432 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 5 10 15 20 25 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.1 1.0 10.0 100.0 1000.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 10ms 1ms dc r ds(on) limited t j(max) =175c, t c =25c v ds =12.5v i d =20a single pulse 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) t j(max) =175c t c =25c 10 alpha & omega semiconductor, ltd. www.aosmd.com
aol1432 typical electrical and thermal characteristics 0 10 20 30 40 50 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 10 20 30 40 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 10 20 30 40 50 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) t a =25c 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse alpha & omega semiconductor, ltd. www.aosmd.com
aol1432 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd char ge gate charg e test circuit & waveform - + vdc dut vdd vgs vds vgs r l rg vgs vds 10% 90% res istive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vd c dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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